DocumentCode :
1914585
Title :
The effect on overlay of wafer distortion induced by dielectric reflow process
Author :
Rivera, G. ; Clementi, C.
Author_Institution :
SGS-Thomson Microelectron., Agrate Brianza, Italy
fYear :
1993
fDate :
13-16 Sept. 1993
Firstpage :
561
Lastpage :
564
Abstract :
Overlay requirements imposed by ULSI devices scaling down are more and more tight. This makes it necessary to evaluate the influence of any technological step on the lithographic registration process. Using an original method the authors have estimated the impact on the lithographic process of the wafer distortion induced by the different thermal treatments used to planarize interlevel dielectric.
Keywords :
ULSI; integrated circuit manufacture; lithography; planarisation; rapid thermal annealing; ULSI device scaling; dielectric reflow process; lithographic registration process; overlay requirements; planarize interlevel dielectric; thermal treatment; wafer distortion; Cooling; Dielectric devices; Dielectric substrates; Distortion measurement; Furnaces; Heating; Implants; Nonlinear distortion; Plasma temperature; Rapid thermal annealing;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Solid State Device Research Conference, 1993. ESSDERC '93. 23rd European
Conference_Location :
Grenoble
Print_ISBN :
2863321358
Type :
conf
Filename :
5435563
Link To Document :
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