Title :
Raman spectroscopy measurement of local stress induced by LOCOS and trench structures in the silicon substrate
Author :
De Wolf, Ingrid ; Maes, Herman E. ; Yallup, Kevin
Author_Institution :
IMEC, Leuven, Belgium
Abstract :
Micro-Raman spectroscopy is used to study local mechanical stress at trench-LOCOS structures. At the trench edges the stress is compressive. The local stress surrounding trench and LOCOS is highly affected when both structures are located close to each other. The stress picture obtained from both planar and cross-sectional experiments agrees very well with stress predicted by finite element calculations.
Keywords :
Raman spectra; compressive strength; elemental semiconductors; finite element analysis; oxidation; silicon; LOCOS structures; compressive stress; cross-sectional experiments; finite element calculations; local mechanical stress; local oxidation; microRaman spectroscopy; planar experiments; silicon substrate; trench edges; trench structures; Compressive stress; Finite element methods; Frequency; Gold; Plasma measurements; Raman scattering; Silicon; Spectroscopy; Stress measurement; Tensile stress;
Conference_Titel :
Solid State Device Research Conference, 1993. ESSDERC '93. 23rd European
Conference_Location :
Grenoble
