Analysis and modeling of vertical non-uniform doping in bulk MOSFETs for circuit simulation

Author

Khandelwal, S. ; Chauhan, Y.S. ; Karim, M.A. ; Venugopalan, S. ; Sachid, A. ; Niknejad, A. ; Hu, C.

Author_Institution

Dept. of Electron. & Telecommun., Norwegian Univ. of Sci. & Technol., Trondheim, Norway

fYear

2012

fDate

14-17 March 2012

Firstpage

1

Lastpage

5

Abstract

We present an efficient approach to model the effects of vertical non-uniform doping in bulk MOSFETs. The impact of vertical non-uniform doping on device characteristics is analyzed through systematic TCAD simulations. The qualitative nature of the observed effects is also confirmed by the experimental data available in the literature. A modeling methodology for these effects is developed on BSIM6 model framework. The proposed model is in good agreement with the TCAD simulations.

Keywords

MOSFET; circuit simulation; semiconductor device models; semiconductor doping; technology CAD (electronics); BSIM6 model framework; bulk MOSFET; circuit simulation; device characteristics; modeling methodology; systematic TCAD simulation; vertical nonuniform doping; Computational modeling; Doping profiles; Integrated circuit modeling; MOSFETs; Mathematical model; Semiconductor process modeling; BSIM6; Body Bias Effect; Compact Models; Vertical Non-uniform Doping;

fLanguage

English

Publisher

ieee

Conference_Titel

Devices, Circuits and Systems (ICCDCS), 2012 8th International Caribbean Conference on

Conference_Location

Playa del Carmen

Print_ISBN

978-1-4577-1116-9

Electronic_ISBN

978-1-4577-1115-2

Type

conf

DOI

10.1109/ICCDCS.2012.6188935

Filename

6188935