Title :
Compact small-signal model for RF FinFETs
Author :
Alvarado, J. ; Tinoco, J.C. ; Kilchytska, V. ; Flandre, D. ; Raskin, J. -P ; Cerdeira, A. ; Contreras, E.
Author_Institution :
Depto. de I. en Telecomun., UNAM, Mexico City, Mexico
Abstract :
Modeling of the small-signal equivalent circuit of SOI FinFETs through SPICE simulations is presented. A compact model implemented in Verilog-A predicts well the DC characteristics of RF SOI FinFETs and allows the extraction of the intrinsic conductance, transconductance and capacitances at any selected operating point. The intrinsic small-signal equivalent circuit composed of those extracted lumped elements is used in SPICE simulator. This paper compares the parameters extracted from both DC and wideband S-parameter methods.
Keywords :
MOSFET; SPICE; silicon-on-insulator; RF FinFET; RF SOI FinFET; SPICE simulation; SPICE simulator; Verilog-A; capacitance; compact model; compact small-signal model; intrinsic conductance; intrinsic small-signal equivalent circuit; transconductance; wideband S-parameter method; Capacitance; Equivalent circuits; FinFETs; Integrated circuit modeling; Logic gates; Numerical models; Radio frequency; Compact model; FinFETs; SOI; Verilog-A; capacitances; extraction technique;
Conference_Titel :
Devices, Circuits and Systems (ICCDCS), 2012 8th International Caribbean Conference on
Conference_Location :
Playa del Carmen
Print_ISBN :
978-1-4577-1116-9
Electronic_ISBN :
978-1-4577-1115-2
DOI :
10.1109/ICCDCS.2012.6188936
