Title :
Drain current model for bulk strained silicon NMOSFETs
Author :
Tinoco, J.C. ; Alvarado, J. ; Martinez-Lopez, A.G. ; Iñiguez, B. ; Cerdeira, A.
Author_Institution :
Depto. de Ing. en Telecomun., UNAM, Mexico City, Mexico
Abstract :
In this paper, we develop an analytical model to simulate strained silicon NMOSFETs, which allows to describe the drain current. Numerical simulations were performed in order to validate the model, where different technological parameters were considered (e.g. impurity concentrations in Si1-yGey and strained-silicon films). A good agreement with numerical simulations has been obtained.
Keywords :
Ge-Si alloys; MOSFET; elemental semiconductors; semiconductor device models; silicon; Si1-yGey; bulk strained silicon NMOSFET; drain current model; impurity concentration; strained-silicon film; Doping; MOSFETs; Numerical models; Numerical simulation; Semiconductor process modeling; Silicon; Silicon germanium; SiGe; Strained-silicon MOSFET; drain current model; modeling;
Conference_Titel :
Devices, Circuits and Systems (ICCDCS), 2012 8th International Caribbean Conference on
Conference_Location :
Playa del Carmen
Print_ISBN :
978-1-4577-1116-9
Electronic_ISBN :
978-1-4577-1115-2
DOI :
10.1109/ICCDCS.2012.6188937
