A New Very High Density Full Feature EEPROM Cell with minimum Process Complexity

A new highly reliable 3.3V only EEPROM cell technology has been developed . Using this cell concept and technology, a 9.5//2 cell has been manufactured in 0.8μ design rules. Further scaling will lead to a 5μ2 cell in 0.5μ design rules . It is also possible to construct the cell without the access transistor [3]. This lead to another 10 to 15% cell size reduction making the cell competitive in size with Flash Eproms .This new cell concept is very promising for embedded applications requiring high density ( a 4 M ) as well as stand alone low power mobile computing storage applications .