• DocumentCode
    1914830
  • Title

    InP Gunn Diodes with Forward Bias Heterocathode

  • Author

    Storozhenko, I.P. ; Arkusha, Yu.V. ; Prokhorov, E.D. ; Botsula, O.V.

  • Author_Institution
    Karazin Kharkov Nat. Univ., Kharkov
  • fYear
    2007
  • fDate
    10-14 Sept. 2007
  • Firstpage
    117
  • Lastpage
    118
  • Abstract
    Considered in this paper is the operation of InP Gunn diodes with AlxIn1-xAs, GaxIn1-xAs and GaxIn1-xP cathodes. Fundamental behaviors and operation specificity for InP TED´s with forward bias have been found.
  • Keywords
    Gunn diodes; aluminium compounds; arsenic compounds; gallium compounds; indium compounds; phosphorus compounds; AlInAs; GaInAs; GaInP; Gunn diodes; InP; forward bias heterocathode; Cathodes; Diodes; Gunn devices; Indium phosphide;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microwave & Telecommunication Technology, 2007. CriMiCo 2007. 17th International Crimean Conference
  • Conference_Location
    Crimea
  • Print_ISBN
    978-966-335-012-7
  • Type

    conf

  • DOI
    10.1109/CRMICO.2007.4368651
  • Filename
    4368651
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1914830