Title :
Heat Generation in High Power hemt´s Size Estimashion
Author :
Berejnova, P.V. ; Lukashin, V.M. ; Pashkovskii, A.B.
Author_Institution :
Fed. State Unitary Corp. R&PC, Fryazino
Abstract :
A simple model for the heat generation area size depending on HEMT topology and active layers properties is developed. It is shown that real heat generation area size is much less than transistor structure period and the gate drain distance.
Keywords :
heat transfer; power HEMT; semiconductor device models; HEMT topology; active layers; gate drain distance; heat generation area size; high-power HEMT model; transistor structure period; Electromagnetic heating; Electron mobility; Gallium arsenide; HEMTs; Power generation;
Conference_Titel :
Microwave & Telecommunication Technology, 2007. CriMiCo 2007. 17th International Crimean Conference
Conference_Location :
Crimea
Print_ISBN :
978-966-335-012-7
DOI :
10.1109/CRMICO.2007.4368652
