Simulation of non-equilibrium transport in deep submicron MOSFETs

Classical device simulation methods include the resolution of drift-diffusion equations, that cannot handle non-equilibrium effects occurring in submicron devices. On the other hand, the hydrodynamic and the Monte Carlo methods are appropriate for the study of such phenomena at the expense of high computing costs. A method proposed by Bandyopadhyay uses an extension of the well known drift-diffusion formalism to solve the Boltzmann transport equation, where local parameters are computed with a Monte Carlo procedure. We have applied this method to study transport properties in deep submicron MOSFETs.