An analytical estimation model for the spreading resistance of Double-Gate FinFETs

Author

Malheiro, C.T. ; Pereira, A.S.N. ; Giacomini, R.

Author_Institution

Centro Univ. da FEI, Sao Bernardo do Campo, Brazil

fYear

2012

fDate

14-17 March 2012

Firstpage

1

Lastpage

4

Abstract

The FinFET spreading resistance is the component of the parasitic resistance of FinFETs caused by the curved shape of the current lines in drain and source regions, close to the junctions. This work proposes a very simple analytical model for the spreading resistance of Double-Gate FinFETs that is valid for any fin width from 16nm, without fitting parameters. The model output was compared to data extracted from numeric simulation and it showed accuracy better than 8% for the considered range of devices with three different doping concentrations.

Keywords

MOSFET; semiconductor device models; FinFET spreading resistance; analytical estimation model; double-gate FinFET; fin width; fitting parameters; parasitic resistance; very simple analytical model; Current density; Doping; FinFETs; Logic gates; Numerical models; Resistance; Semiconductor process modeling; Double Gate FinFETs; numerical simulation; parasitic resistance; spreading resistance;

fLanguage

English

Publisher

ieee

Conference_Titel

Devices, Circuits and Systems (ICCDCS), 2012 8th International Caribbean Conference on

Conference_Location

Playa del Carmen

Print_ISBN

978-1-4577-1116-9

Electronic_ISBN

978-1-4577-1115-2

Type

conf

DOI

10.1109/ICCDCS.2012.6188945

Filename

6188945