Title :
Determination of the ion erosion rate during the SIMS analysis on AlxGa1−xAs as a function of x using HRXRD
Author :
Koudriavtseva, O. ; Kudriavtsev, Y. ; Escobosa, A. ; Sánchez-R, V.M.
Author_Institution :
Electr. Eng. Dept., Cinvestav-IPN, Mexico City, Mexico
Abstract :
An irregular erosion rate in SIMS can lead to erroneous results during depth profiling analysis of semiconductor hetero-structures. In this work the dependence of erosion on the composition of AlxGA1-xAs is determined. High resolution X-ray diffraction is used to measure the alloy composition considering the deformation due to a good coupling between substrate and layer. The result shows that the erosion rate is reduced to 70% when the AlAs fraction (x) increases from 0 to 0.65.
Keywords :
X-ray diffraction; aluminium compounds; secondary ion mass spectroscopy; AlxGa1-xAs; HRXRD; SIMS analysis; depth profiling analysis; high resolution X-ray diffraction; ion erosion rate; secondary ion mass spectroscopy; semiconductor heterostructures; Gallium arsenide; Lattices; Mass spectroscopy; Metals; Reflection; Substrates; X-ray diffraction; AlGaAs; HRXRD; SIMS; erosion rate;
Conference_Titel :
Devices, Circuits and Systems (ICCDCS), 2012 8th International Caribbean Conference on
Conference_Location :
Playa del Carmen
Print_ISBN :
978-1-4577-1116-9
Electronic_ISBN :
978-1-4577-1115-2
DOI :
10.1109/ICCDCS.2012.6188947
