Title :
Study of the interface area effect on the density of states in PTAA-Cytop® OTFTs
Author :
Castro-Carranza, A. ; Nolasco, J.C. ; Estrada, M. ; Xu, Y. ; Benwadih, M. ; Gwoziecki, R. ; Cerdeira, A. ; Ghibaudo, G. ; Iñiguez, B. ; Pallarès, J.
Author_Institution :
DEEEiA, Univ. Rovira I Virgili, Tarragona, Spain
Abstract :
In this paper we show that the mobility reduces for OTFTs with similar channel length when the channel width is increased. The effect is shown in staggered bottom contact organic thin film transitors (OTFTs) made of the P-Type semiconductor Poly(Triarylamine) PTAA and Cytop® as insulator. It can also be seen from experiment, that this mobility reduction is associated to an increase in the density of localized traps present in the active layer material. An interpretation of this effect is presented.
Keywords :
organic semiconductors; thin film transistors; P-type semiconductor poly(triarylamine); PTAA-Cytop OTFT; active layer material; channel length; channel width; interface area effect; localized traps; staggered bottom contact organic thin film transitors; Logic gates; Organic thin film transistors; Pentacene; Threshold voltage;
Conference_Titel :
Devices, Circuits and Systems (ICCDCS), 2012 8th International Caribbean Conference on
Conference_Location :
Playa del Carmen
Print_ISBN :
978-1-4577-1116-9
Electronic_ISBN :
978-1-4577-1115-2
DOI :
10.1109/ICCDCS.2012.6188948
