DocumentCode :
1915055
Title :
Physical Modeling Of Nanoelectronic Devices
Author :
Abramczyk, E.R. ; Meindl, J.D.
Author_Institution :
Center for Integrated Syst., Stanford Univ., Stanford, CA, USA
fYear :
1993
fDate :
13-16 Sept. 1993
Firstpage :
629
Lastpage :
632
Abstract :
An analytic model has been developed for nanoelectronic device analysis. Application of the model to determine the channel length limited by the short channel effect is presented. The analysis indicates for Lch ≲ 150 nm an alternate source-drain junction design is required for room and low temperature operation.
Keywords :
nanoelectronics; analytic model; channel length; nanoelectronic device analysis; physical modeling; short channel effect; source-drain junction design; Boundary conditions; Computer interfaces; Cooling; Laplace equations; Nanoscale devices; Poisson equations; Silicon; Temperature; Threshold voltage; Upper bound;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Solid State Device Research Conference, 1993. ESSDERC '93. 23rd European
Conference_Location :
Grenoble
Print_ISBN :
2863321358
Type :
conf
Filename :
5435577
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1915055
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