• DocumentCode
    1915094
  • Title

    Safe Operating Current Density and Failure modes of Carbon doped base AlGaAs/GaAs HBTs

  • Author

    Prasad, S.J. ; Hultine, E.

  • Author_Institution
    Electron. Res. Labs., Tektronix, Beaverton, OR, USA
  • fYear
    1993
  • fDate
    13-16 Sept. 1993
  • Firstpage
    643
  • Lastpage
    646
  • Abstract
    The HBTs used in this study were grown by OMVPE. The base was carbon doped to 3×1019 cm-3 with a thickness of 500A. Several 3μ ×10μ HBTs were biased at IC=2, 4 and 10mA (VCE=2V) and maintained at TA=125°C. Based on 1000 hours of operation at 125°C , IC =2mA is safe, 4mA is marginal and 10mA is fatal.
  • Keywords
    III-V semiconductors; MOCVD; aluminium compounds; current density; gallium arsenide; heterojunction bipolar transistors; semiconductor growth; vapour phase epitaxial growth; AlGaAs-GaAs:C; HBT; OMVPE growth; carbon doped base; current 10 mA; current 2 mA; current 4 mA; failure modes; safe operating current density; size 500 A; temperature 125 degC; time 1000 hour; voltage 2 V; Carbon dioxide; Computerized monitoring; Current density; Degradation; Electromagnetic heating; Gallium arsenide; Heterojunction bipolar transistors; Maintenance; Noise measurement; Temperature;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid State Device Research Conference, 1993. ESSDERC '93. 23rd European
  • Conference_Location
    Grenoble
  • Print_ISBN
    2863321358
  • Type

    conf

  • Filename
    5435579
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1915094