DocumentCode
1915146
Title
A New GaAlAs-GaInP-GaAs HBT Technology for Digital and Microwave Applications
Author
Launay, P. ; Desrousseaux, P. ; Dangla, J. ; Fournier, V. ; Benchimol, J.L. ; Alexandre, F. ; Duchenois, A.M. ; Menouni, M.
Author_Institution
Lab. de Bagneux, FRANCE TELECOM-CNET-PAB, Bagneux, France
fYear
1993
fDate
13-16 Sept. 1993
Firstpage
647
Lastpage
650
Abstract
A new GaAlAs-GalnP-GaAs HBT technology has been developed to benefit from the GalnP-GaAs heterojunction properties and from the etching selectivity between GalnP and GaAs. The multilayer structures are grown by CBE. A 2:1 Multiplexer and a Laser Driver operating at 5.6 GBit/s and 7 GBit/s respectively have been demonstrated for the first time in this material system.
Keywords
III-V semiconductors; aluminium compounds; gallium arsenide; gallium compounds; heterojunction bipolar transistors; indium compounds; microwave bipolar transistors; CBE; GaAlAs-GaInP-GaAs; HBT technology; bit rate 5.6 Gbit/s; bit rate 7 Gbit/s; digital applications; etching selectivity; heterojunction property; laser driver; material system; microwave applications; Chemical technology; Conductivity; Gallium arsenide; Gold; Heterojunction bipolar transistors; Manganese; Microwave devices; Microwave technology; Ohmic contacts; Sputter etching;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid State Device Research Conference, 1993. ESSDERC '93. 23rd European
Conference_Location
Grenoble
Print_ISBN
2863321358
Type
conf
Filename
5435580
Link To Document