• DocumentCode
    1915167
  • Title

    Rapid, On-line Extraction of Base Resistance of HBTs and Correlation with Minimum Noise Figure

  • Author

    Prasad, S.J. ; Laskar, J.

  • Author_Institution
    Electron. Res. Labs., Beaverton, OR, USA
  • fYear
    1993
  • fDate
    13-16 Sept. 1993
  • Firstpage
    651
  • Lastpage
    654
  • Abstract
    A simple, on-line method of extracting base resistance from measured S-parameters is presented. The measured base resistance correlates very well with fmax and noise parameter data.
  • Keywords
    S-parameters; heterojunction bipolar transistors; semiconductor device measurement; semiconductor device noise; HBT; S-parameters; base resistance; minimum noise figure; on-line extraction; Capacitance; Circuits; Current measurement; Electrical resistance measurement; Frequency measurement; Gallium arsenide; Heterojunction bipolar transistors; Noise figure; Noise measurement; Scattering parameters;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid State Device Research Conference, 1993. ESSDERC '93. 23rd European
  • Conference_Location
    Grenoble
  • Print_ISBN
    2863321358
  • Type

    conf

  • Filename
    5435581
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1915167