A monolithic 0.35-µm SiGe Class E power amplifier designed at 1.9 GHz

Author

dos Santos, Antonio Jose S. ; Martins, Everson

Author_Institution

CCS, UNICAMP, Campinas, Brazil

fYear

2013

fDate

4-7 Aug. 2013

Firstpage

1

Lastpage

5

Abstract

This paper presents the design of a monolithic 1.9 GHz, Class E, power amplifier (PA) for wireless application with the main components on chip. A cascode topology is used to attenuate transistor stress and to increase the output power, although it compromises the efficiency due to the dissipative process caused by transistor parasitic capacitances. The proposed PA was developed in a single-ended topology because most of the existing components designed use this configuration. The PA was developed in a 0.35-μm SiGe BiCMOS technology with 3.3 Volts which delivers 20.9 dBm output power and 25.5% of power added efficiency (PAE). It also presents a bandwidth of 60 MHz which is suitable for GSM application. Some considerations about the layout are also discussed.

Keywords

BiCMOS analogue integrated circuits; Ge-Si alloys; UHF integrated circuits; UHF power amplifiers; integrated circuit design; semiconductor materials; GSM application; PA design; SiGe; bandwidth 60 MHz; cascode topology; efficiency 25.5 percent; frequency 1.9 GHz; monolithic SiGe class E power amplifier; single-ended topology; size 0.35 mum; transistor parasitic capacitances; transistor stress attenuation; voltage 3.3 V; CMOS integrated circuits; Inductors; Layout; Logic gates; Power amplifiers; Power generation; Transistors; Class E; Power amplifier (PA); low power; output power; power added efficiency (PAE); switching mode; transistor stress; wireless;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave & Optoelectronics Conference (IMOC), 2013 SBMO/IEEE MTT-S International

Conference_Location

Rio de Janeiro

Type

conf

DOI

10.1109/IMOC.2013.6646488

Filename

6646488