Title :
High frequency bipolar transistor on SIMOX
Author :
Magnusson, U. ; Norström, H. ; Kaplan, W. ; Zhang, S. ; Jargelius, M. ; Sigurd, D.
Author_Institution :
Swedish Inst. of Microelectron., Kista, Sweden
Abstract :
A high frequency, double polysilicon bipolar transistor technology on SIMOX is presented. The SOI substrate consists of a conventional SIMOX wafer upon which a twin epi-layer is grown. A high-frequency bipolar transistor technology is then transferred to this substrate. The initial experimental results are presented and show a high cut-off frequency of some 12.4 GHz. A comparison with identical devices fabricated on bulk substrates is also given and indicate that an increase of about 20% in fT can be expected.
Keywords :
SIMOX; bipolar transistors; SIMOX wafer; SOI substrate; Si; double polysilicon bipolar transistor technology; frequency 12.4 GHz; high frequency bipolar transistor; twin epilayer; Bipolar transistors; Conductivity; Cutoff frequency; Dielectric materials; Dielectric substrates; Etching; Integrated circuit manufacture; Microelectronics; Oxygen; Silicon;
Conference_Titel :
Solid State Device Research Conference, 1993. ESSDERC '93. 23rd European
Conference_Location :
Grenoble
