A new low loss high power GTO with low snubber capacity

Author

Nakagawa, T. ; Tokunoh, F. ; Yamamoto, M. ; Sennenbara, N. ; Sherbondy, J.

Author_Institution

Mitsubishi Electric Corp., Fukuoka, Japan

fYear

1993

fDate

2-8 Oct 1993

Firstpage

1299

Abstract

A novel low-loss, high-power GTO (gate turn-off thyristor) which has a blocking voltage of 4.5 kV and a current capability of 4 kA with a snubber capacity of 5 μF has been developed. A narrow n-emitter stripe whose width is reduced 35% compared with conventional GTO and de-alloy technology were adopted for this GTO. The de-alloy technology that is used here has no alloying process and realizes improved uniformity of the pressure distribution, as well as optimization of the impurity diffusion profile, leading to an improved tradeoff between turn-on and turn-off characteristics. Using these technologies, snubber capacity was reduced 17%, turn-on switching loss was reduced 50%, and turn-off switching loss was reduced 20% compared with the conventional GTO

Keywords

overvoltage protection; thyristor applications; 4 kA; 4.5 kV; de-alloy technology; gate turn-off thyristor; high power GTO; impurity diffusion profile; low loss; low snubber capacity; narrow n-emitter stripe; pressure distribution; snubber capacity; turn-off characteristics; turn-on characteristics; Alloying; Cathodes; Cities and towns; Electrodes; Impurities; Passivation; Silicon alloys; Snubbers; Switching loss; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Industry Applications Society Annual Meeting, 1993., Conference Record of the 1993 IEEE

Conference_Location

Toronto, Ont.

Print_ISBN

0-7803-1462-X

Type

conf

DOI

10.1109/IAS.1993.299103

Filename

299103