Title :
Evaluation of CMOS/SOI Devices on Plasma-Thinned Bonded Silicon Wafers
Author :
Matloubian, M. ; Pinter, J. ; Aubuchon, K. ; Marsh, O. ; McClain, B. ; Mathur, D.P. ; Feng, T. ; Gardopee, G.
Author_Institution :
Hughes Technol. Center, Carlsbad, CA, USA
Abstract :
A new type of precision thinned bonded silicon wafer is evaluated for thin film CMOS/SOI applications. SOI wafers with silicon film thickness variations of less than ±2.5 nm are available with choice of substrate doping and buried oxide thickness. CMOS devices fabricated on these wafers have the same carrier mobilities as comparable bulk silicon MOSFETs.
Keywords :
CMOS integrated circuits; elemental semiconductors; silicon; silicon-on-insulator; thin film devices; CMOS-SOI devices; SOI wafers; Si; bulk silicon MOSFET; buried oxide thickness; carrier mobilities; plasma-thinned bonded silicon wafers; precision thinned bonded silicon wafer; silicon film thickness variations; silicon-on-insulator technology; substrate doping; thin film CMOS-SOI applications; CMOS technology; Circuits; MOSFETs; Optical films; Plasma applications; Plasma devices; Plasma measurements; Semiconductor films; Silicon; Wafer bonding;
Conference_Titel :
Solid State Device Research Conference, 1993. ESSDERC '93. 23rd European
Conference_Location :
Grenoble
