DocumentCode
1915414
Title
Shadow write and read for at-speed BIST of TDM SRAMs
Author
Wu, Yuejian ; Calin, Liviu
Author_Institution
Nortel Networks, Ottawa, Ont., Canada
fYear
2001
fDate
2001
Firstpage
985
Lastpage
994
Abstract
Time Domain Multiplex (TDM) SRAMs are a new type of multi-port SRAMs. Due to their small area and flexibility, they have found a wide range of applications in telecommunication ASICs. For a TDM SRAM, the memory core runs many times faster than the circuits that access it. In other words, the memory runs at an internal clock that is much faster than the system clock. This slow system clock coupled with the fast internal clock creates new challenges for at-speed testing of TDM SRAMs. This paper proposes a novel BIST solution for at-speed testing of TDM SRAMs with a slow system clock. The solution can be implemented with most commercial BIST controllers for conventional SRAMs. All the required modifications can be included in a modified memory collar The hardware addition is small. The test time is the same as that for a conventional multi-port SRAM of the same size
Keywords
VLSI; application specific integrated circuits; built-in self test; integrated circuit testing; logic testing; random-access storage; semiconductor storage; time division multiplexing; BIST controllers; SRAM architecture; TDM SRAMs; at-speed BIST; at-speed testing; embedded SRAM; fast internal clock; memory core; modified memory collar; multi-port SRAMs; shadow read; shadow write; slow system clock; static RAM; telecommunication ASICs; test time reduction; time domain multiplex SRAMs; Built-in self-test; Circuit testing; Clocks; Coupling circuits; Decoding; Random access memory; Silicon; System testing; Time division multiplexing; Timing;
fLanguage
English
Publisher
ieee
Conference_Titel
Test Conference, 2001. Proceedings. International
Conference_Location
Baltimore, MD
ISSN
1089-3539
Print_ISBN
0-7803-7169-0
Type
conf
DOI
10.1109/TEST.2001.966723
Filename
966723
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