DocumentCode :
1915414
Title :
Shadow write and read for at-speed BIST of TDM SRAMs
Author :
Wu, Yuejian ; Calin, Liviu
Author_Institution :
Nortel Networks, Ottawa, Ont., Canada
fYear :
2001
fDate :
2001
Firstpage :
985
Lastpage :
994
Abstract :
Time Domain Multiplex (TDM) SRAMs are a new type of multi-port SRAMs. Due to their small area and flexibility, they have found a wide range of applications in telecommunication ASICs. For a TDM SRAM, the memory core runs many times faster than the circuits that access it. In other words, the memory runs at an internal clock that is much faster than the system clock. This slow system clock coupled with the fast internal clock creates new challenges for at-speed testing of TDM SRAMs. This paper proposes a novel BIST solution for at-speed testing of TDM SRAMs with a slow system clock. The solution can be implemented with most commercial BIST controllers for conventional SRAMs. All the required modifications can be included in a modified memory collar The hardware addition is small. The test time is the same as that for a conventional multi-port SRAM of the same size
Keywords :
VLSI; application specific integrated circuits; built-in self test; integrated circuit testing; logic testing; random-access storage; semiconductor storage; time division multiplexing; BIST controllers; SRAM architecture; TDM SRAMs; at-speed BIST; at-speed testing; embedded SRAM; fast internal clock; memory core; modified memory collar; multi-port SRAMs; shadow read; shadow write; slow system clock; static RAM; telecommunication ASICs; test time reduction; time domain multiplex SRAMs; Built-in self-test; Circuit testing; Clocks; Coupling circuits; Decoding; Random access memory; Silicon; System testing; Time division multiplexing; Timing;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Test Conference, 2001. Proceedings. International
Conference_Location :
Baltimore, MD
ISSN :
1089-3539
Print_ISBN :
0-7803-7169-0
Type :
conf
DOI :
10.1109/TEST.2001.966723
Filename :
966723
Link To Document :
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