Title :
Programmable SiGe BiCMOS Low-Pass Filter for a Multicarrier WCDMA Base-Station Receiver
Author :
Saari, Ville ; Mustola, Jussi ; Jussila, Jarkko ; Ryynänen, Jussi ; Lindfors, Saska ; Halonen, Kari
Author_Institution :
Electron. Circuit Design Lab., Helsinki Univ. of Technol.
Abstract :
SiGe BiCMOS low-pass filter for a multicarrier WCDMA base-station receiver is described in this paper. The 4th-order Chebyshev filter with a 0.1-dB passband ripple is designed to drive a high-resolution A/D converter. The -3-dB frequency of the implemented filter can be programmed to four different bandwidths: 2.5 MHz, 5 MHz, 7.5 MHz, and 10 MHz depending on the number of received WCDMA channels. The filter achieves +9.7-dBV in-band IIP3, +20dBV out-of-band IIP3, and 8.5-nV/radicHz input-referred noise density with 10-MHz bandwidth. The circuit uses a 2.5-V supply and has been fabricated in a 0.25mum SiGe BiCMOS process
Keywords :
BiCMOS analogue integrated circuits; Ge-Si alloys; UHF filters; code division multiple access; low-pass filters; programmable circuits; radio receivers; wireless channels; 10 MHz; 2.5 MHz; 2.5 V; 4th-order Chebyshev filter; 5 MHz; 7.5 MHz; BiCMOS process; SiGe; WCDMA channels; analog-to-digital converter; high-resolution A/D converter; multicarrier WCDMA base-station receiver; passband ripple; programmable BiCMOS low-pass filter; wideband code division multiple access; Band pass filters; Bandwidth; BiCMOS integrated circuits; Chebyshev approximation; Frequency; Germanium silicon alloys; Low pass filters; Multiaccess communication; Passband; Silicon germanium; BiCMOS; SiGe; integrated circuits; low-pass filter; multicarrier system; receiver;
Conference_Titel :
Norchip Conference, 2006. 24th
Conference_Location :
Linkoping
Print_ISBN :
1-4244-0772-9
DOI :
10.1109/NORCHP.2006.329235
