• DocumentCode
    1915468
  • Title

    Characteristics of a fast rise time power supply for a pulsed plasma reactor

  • Author

    Lawless, Phil A. ; Yamamoto, Toshiaki ; Poteat, Sandra ; Boss, Charles ; Nunez, Carlos M. ; Ramsey, Geddes H. ; Engels, Roger

  • Author_Institution
    Research Triangle Inst., Research Triangle Park, NC, USA
  • fYear
    1993
  • fDate
    2-8 Oct 1993
  • Firstpage
    1875
  • Abstract
    Rotating spark gap devices for switching high-voltage direct current into a corona plasma reactor can achieve pulse rise times in the range of tens of nanoseconds. A single-gap circuit is effective for generating moderate peak voltages, but is limited by a multiple sparking phenomenon. A double-gap circuit can achieve equal peak voltages with every spark, but with a reduced number of pulses, compared to the single gap. Both configurations have an upper voltage imposed by the changing impedance of the reactor as voltage and frequency are varied. The pulse characteristics are reported for both types of circuits, along with some spectroscopic analyses. The general performance of the reactors for destruction of some compounds with both circuits is also reported. The single-gap supply is shown to provide a wider range of operating parameters than the double-gap supply but it is much more difficult to characterize the pulses, particularly their frequency, than with the double-gap supply
  • Keywords
    corona; plasma devices; power supplies to apparatus; pulsed power technology; spark gaps; HVDC; corona; double-gap circuit; fast rise time power supply; impedance; performance; pulse characteristics; pulsed plasma reactor; rotating spark gap devices; single-gap circuit; spectroscopic analyses; switching; Corona; Frequency; Inductors; Nanoscale devices; Plasma devices; Plasma properties; Pulse circuits; Pulsed power supplies; Sparks; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Industry Applications Society Annual Meeting, 1993., Conference Record of the 1993 IEEE
  • Conference_Location
    Toronto, Ont.
  • Print_ISBN
    0-7803-1462-X
  • Type

    conf

  • DOI
    10.1109/IAS.1993.299109
  • Filename
    299109