Title :
Noise figure degradation under emitter-base reverse stress for high-frequency bipolar ICs
Author :
Itoh, Nobuyuki ; Katsumata, Yasuhiro ; Iwai, Hiroshi
Author_Institution :
ULSI Labs., Toshiba Corp., Kawasaki, Japan
Abstract :
In this paper, the correlation between noise figure degradation and the degradation of DC characteristics during emitter-base reverse stress is studied. It was found that the generation-recombination centers, which introduce emitter-base reverse stress, have an influence on high-frequency noise characteristic degradation.
Keywords :
bipolar integrated circuits; DC characteristics; emitter-base reverse stress; generation-recombination centers; high frequency bipolar IC; high frequency noise characteristic degradation; noise figure degradation; Circuit noise; Degradation; Frequency; Impedance; Integrated circuit noise; Microwave transistors; Noise cancellation; Noise figure; Noise measurement; Stress;
Conference_Titel :
Solid State Device Research Conference, 1993. ESSDERC '93. 23rd European
Conference_Location :
Grenoble
