DocumentCode
1915495
Title
Noise figure degradation under emitter-base reverse stress for high-frequency bipolar ICs
Author
Itoh, Nobuyuki ; Katsumata, Yasuhiro ; Iwai, Hiroshi
Author_Institution
ULSI Labs., Toshiba Corp., Kawasaki, Japan
fYear
1993
fDate
13-16 Sept. 1993
Firstpage
727
Lastpage
730
Abstract
In this paper, the correlation between noise figure degradation and the degradation of DC characteristics during emitter-base reverse stress is studied. It was found that the generation-recombination centers, which introduce emitter-base reverse stress, have an influence on high-frequency noise characteristic degradation.
Keywords
bipolar integrated circuits; DC characteristics; emitter-base reverse stress; generation-recombination centers; high frequency bipolar IC; high frequency noise characteristic degradation; noise figure degradation; Circuit noise; Degradation; Frequency; Impedance; Integrated circuit noise; Microwave transistors; Noise cancellation; Noise figure; Noise measurement; Stress;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid State Device Research Conference, 1993. ESSDERC '93. 23rd European
Conference_Location
Grenoble
Print_ISBN
2863321358
Type
conf
Filename
5435595
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