A New Intrinsic charge loss analysis on 16 Mb EPROM

Author

Mondon, F. ; Mazoyer, P. ; Guillaumot, B.

Author_Institution

J. FOURIER Univ. Grenoble, Grenoble, France

fYear

1993

fDate

13-16 Sept. 1993

Firstpage

731

Lastpage

734

Abstract

The EPROM charge loss is linked to electron trapping, depending on electric field inside the interpoly dielectric at the end of the programming step. With respect to this behavior, the bottom oxide-nitride interface qualities and trapping properties, together with electron injection from floating gate to the interpoly dielectric during cell programming are key points for 16 Mb EPROM and next generation device reliability improvement.

Keywords

EPROM; dielectric materials; electron traps; integrated circuit reliability; EPROM; bottom oxide-nitride interface; cell programming; electric field; electron injection; electron trapping; floating gate; interpoly dielectric; intrinsic charge loss; next generation device reliability; storage capacity 16 Mbit; trapping properties; Boron; Charge carriers; Dielectric losses; EPROM; Electron traps; Microelectronics; Nonvolatile memory; Polarization; Temperature distribution; Threshold voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid State Device Research Conference, 1993. ESSDERC '93. 23rd European

Conference_Location

Grenoble

Print_ISBN

2863321358

Type

conf

Filename

5435596

Link To Document

https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1915528