DocumentCode :
1915624
Title :
High Speed Bipolar on Bonded Buried Silicide SOI (S2OI)
Author :
Goody, S.B. ; Osborne, P.H. ; Quinn, C. ; Blackstone, S.
Author_Institution :
Mitel Semiconductor, Swindon, Wilts, UK
fYear :
1998
fDate :
8-10 Sept. 1998
Firstpage :
500
Lastpage :
503
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Solid-State Device Research Conference, 1998. Proceeding of the 28th European
Conference_Location :
Bordeaux, France
Print_ISBN :
2-86332-234-6
Type :
conf
Filename :
1503598
Link To Document :
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