Low-Frequency Noise in SiGe P-Channel MOSFETs designed for 0.13 um Technology

Author

Okhonin, S. ; Georgescu, B. ; Py, M.A. ; Fischer, H. ; Risch, L.

Author_Institution

Swiss Federal Institute of Technology, Lausanne, Switzerland

fYear

1998

fDate

8-10 Sept. 1998

Firstpage

504

Lastpage

507

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State Device Research Conference, 1998. Proceeding of the 28th European

Conference_Location

Bordeaux, France

Print_ISBN

2-86332-234-6

Type

Filename

1503599

Link To Document