A new generation of intelligent power devices for motor drive applications

Author

Motto, Eric R. ; Majumdar, Gourab ; Ohshima, Shigetoshi ; Takanashi, Koki

Author_Institution

Powerex Inc., Youngwood, PA

fYear

1993

fDate

2-8 Oct 1993

Firstpage

1332

Abstract

A novel low-loss, high-speed series of intelligent IGBT (insulated-gate bipolar transistor) power modules has been developed. Power device performance has been enhanced through the use of third-generation IGBT chip technology with optimized gate drive and control circuits. Short-circuit protection using current-sense IGBTs with real-time current limiting allows power devices to be optimized for lowest operational losses. Further reduction of losses is achieved through the use of a new, ultrafast, soft-recovery, free wheel diode chip. New compact isolated base packages containing six or seven power devices with current ratings up to 200 A at 600 V, and 100 A at 1200 V are designed for cost-effective, high-performance motor control applications. The internal design philosophy and architecture of these devices are explained

Keywords

electric drives; electric motors; insulated gate bipolar transistors; machine control; 100 A; 1200 V; 200 A; 600 V; IGBT; architecture; compact isolated base packages; control circuits; current sense IGBT; free wheel diode chip; gate drive circuits; high-speed; insulated-gate bipolar transistor; intelligent power devices; internal design; losses reduction; low-loss; motor control; motor drive applications; real-time current limiting; short-circuit protection; soft-recovery; Circuits; Current limiters; Insulated gate bipolar transistors; Insulation; Isolation technology; Motor drives; Multichip modules; Power generation; Protection; Wheels;

fLanguage

English

Publisher

ieee

Conference_Titel

Industry Applications Society Annual Meeting, 1993., Conference Record of the 1993 IEEE

Conference_Location

Toronto, Ont.

Print_ISBN

0-7803-1462-X

Type

conf

DOI

10.1109/IAS.1993.299120

Filename

299120