Title :
Channel Waveguides Through Silicon Wafers for Optically Coupled 3D Integrated Circuits
Author :
Rudakov, V.L. ; Posternak, V.V.
Author_Institution :
Inst. of Microelectron., Yaroslavl, Russia
Abstract :
Design of IR waveguides through a n-type conductive silicon wafers by aluminum thermomigration method (process of temperature gradient zone melting) is reported. Refraction index change between core and cladding waveguide is 0.01. The light transmission efficiency for stray light decreased by one order of magnitude by increasing the horizontal spacing up to the size of waveguide core (50 μm).
Keywords :
elemental semiconductors; optical couplers; refractive index; silicon; three-dimensional integrated circuits; zone melting; IR waveguides; Si; aluminum thermomigration; channel waveguides; cladding waveguide; core waveguide; n-type conductive silicon wafers; optically coupled 3D integrated circuits; refraction index; stray light; temperature gradient zone melting; through silicon wafers; Aluminum; Coupling circuits; Integrated optics; Optical coupling; Optical refraction; Optical waveguides; Silicon; Temperature; Three-dimensional integrated circuits; Waveguide transitions;
Conference_Titel :
Solid State Device Research Conference, 1993. ESSDERC '93. 23rd European
Conference_Location :
Grenoble
