Title :
Physical Mechanisms of Hot-Carrier-Induced Degradation in Deep-Submicron MOSFETs
Author :
Cristoloveanu, Sorin
Author_Institution :
Lab. de Phys. des Composants a Semicond., ENSERG, Grenoble, France
Abstract :
Physical aspects involved in transistor aging are reviewed with emphasis on the special behavior of mesoscopic devices as compared to conventional short-channel MOSFETs. Major differences are related to carrier heating, defect localization and characterization techniques.
Keywords :
MOSFET; hot carriers; mesoscopic systems; carrier heating; characterization techniques; deep-submicron MOSFET; defect localization; hot-carrier-induced degradation; mesoscopic devices; physical mechanisms; Aging; CMOS technology; Degradation; Electron mobility; Heating; Hot carriers; Integrated circuit reliability; MOSFETs; Silicon on insulator technology; Temperature;
Conference_Titel :
Solid State Device Research Conference, 1993. ESSDERC '93. 23rd European
Conference_Location :
Grenoble
