Title :
High efficiency power HFETs for low power wireless applications [AlGaAs/InGaAs devices]
Author :
Nair, V. ; Tehrani, S. ; Halchin, D. ; Glass, E. ; Fisk, E. ; Majerus, M.
Author_Institution :
Corporate Res. Labs., Motorola Inc., Phoenix, AZ, USA
Abstract :
This paper discusses the development of depletion mode heterojunction FETs (HFETs) for high efficiency power amplifiers. At 850 MHz, a 12 mm HFET achieved power added efficiency of 72% and an output power of +31.5 dBm at V/sub ds/=3.0 V. An optimized HFET achieved 73% power added efficiency and 30 dBm output power at V/sub ds/=2.0 V. These devices also exhibited a 12 dB improvement in out-of-band noise performance compared to ion implanted MESFETs.
Keywords :
III-V semiconductors; UHF field effect transistors; UHF power amplifiers; aluminium compounds; gallium arsenide; indium compounds; power field effect transistors; semiconductor device noise; 2.0 V; 3.0 V; 72 percent; 73 percent; 850 MHz; AlGaAs-InGaAs; depletion mode heterojunction FETs; low power wireless applications; out-of-band noise performance; output power; power HFETs; power added efficiency; power amplifiers; FETs; Gallium arsenide; HEMTs; Heterojunctions; High power amplifiers; Laboratories; MODFETs; Power generation; Power measurement; Radio frequency;
Conference_Titel :
Microwave and Millimeter-Wave Monolithic Circuits Symposium, 1996. Digest of Papers., IEEE 1996
Conference_Location :
San Francisco, CA, USA
Print_ISBN :
0-7803-3360-8
DOI :
10.1109/MCS.1996.506294
