Title :
IGBT fault current limiting circuit
Author :
Chokhawala, Rahul ; Castino, Giuseppe
Author_Institution :
Int. Rectifier Corp., El Segundo, CA, USA
Abstract :
Circuits are proposed which, by limiting the fault current magnitude, extends the short-circuit withstand time of high-efficiency (high-gain) IGBTs (insulated-gate bipolar transistors). Limiting of the fault current magnitude also results in reduced turn-off voltage transients, a desirable byproduct, especially for higher current modules. Moreover, the adverse Miller effect is counterbalanced to a great degree. If the fault current is of the short transient type, the circuit restores normal operation, a desirable feature for noise-prone systems. The circuit does not require an external DC supply to operate. This feature combined with the simplicity of the circuit, renders it feasible for insertion in IGBT modules or connection as an interface between the gate driver and module
Keywords :
driver circuits; fault currents; insulated gate bipolar transistors; overcurrent protection; power transistors; transients; IGBT; Miller effect; fault current limiting circuit; gate driver; overcurrent protection; power transistors; short-circuit withstand time; turn-off voltage transients; Circuit faults; Circuit noise; Driver circuits; Fault currents; Insulated gate bipolar transistors; Power system protection; Power transistors; Rectifiers; Temperature; Voltage;
Conference_Titel :
Industry Applications Society Annual Meeting, 1993., Conference Record of the 1993 IEEE
Conference_Location :
Toronto, Ont.
Print_ISBN :
0-7803-1462-X
DOI :
10.1109/IAS.1993.299123