An ion-implanted 13 watt C-band MMIC with 60% peak power added efficiency

Author

Pribble, W.L. ; Griffin, E.L.

Author_Institution

ITT Gallium Arsenide Technol. Center, Roanoke, VA, USA

fYear

1996

fDate

17-19 June 1996

Firstpage

25

Lastpage

28

Abstract

A GaAs MMIC power amplifier that produces in excess of 13 watts of RF power at 60% peak power added efficiency operating in C-band has been developed. Output power over 12 watts at better than 52% PAE has been measured over a 23% fractional bandwidth. The nominal circuit has been designed using non-linear modelling techniques and optimized empirically through fabrication and analysis of an 18-element Taguchi orthogonal array of circuits. The array circuits have been fabricated using ITT-GTC´s Multi-Function Self Aligned Gate process.

Keywords

III-V semiconductors; MESFET integrated circuits; MMIC power amplifiers; circuit analysis computing; gallium arsenide; integrated circuit design; integrated circuit modelling; integrated circuit reliability; 13 W; 60 percent; C-band; GaAs; MESFET-based circuit; MMIC power amplifier; RF power; Taguchi orthogonal array; fractional bandwidth; multi-function self aligned gate process; nonlinear modelling techniques; output power; peak power added efficiency; Bandwidth; Circuits; Design optimization; Gallium arsenide; MMICs; Power amplifiers; Power generation; Power measurement; Radio frequency; Radiofrequency amplifiers;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave and Millimeter-Wave Monolithic Circuits Symposium, 1996. Digest of Papers., IEEE 1996

Conference_Location

San Francisco, CA, USA

Print_ISBN

0-7803-3360-8

Type

conf

DOI

10.1109/MCS.1996.506296

Filename

506296