K through Ka-band driver and power amplifiers

Author

Simon, K.M. ; Wohlert, R.M. ; Wendler, J.P. ; Aucoin, L.M. ; Vye, D.W.

Author_Institution

Raytheon Co., Andover, MA, USA

fYear

1996

fDate

17-19 June 1996

Firstpage

29

Lastpage

32

Abstract

First pass low, medium, and high power MMIC amplifiers operating over the 17 to 40 GHz band have been demonstrated. The low power driver amplifier delivers 8 dBm output power with 8 dB associated gain and the medium power driver amplifier delivers a minimum of 13 dBm with 8 dB associated gain across the band. The high power amplifier delivers 24 dBm output power from 17 to 35 GHz and greater than 22 dBm from 35 to 40 GHz with a minimum of 17.5 dB associated gain. The low power driver amplifier and the high power amplifier were combined to demonstrate a minimum of 22.5 dBm output power with greater than 24.5 dB associated gain across the 17 to 40 GHz band.

Keywords

HEMT integrated circuits; MMIC power amplifiers; driver circuits; field effect MIMIC; field effect MMIC; millimetre wave amplifiers; power amplifiers; wideband amplifiers; 17 to 40 GHz; 17.5 dB; 24.5 dB; 8 dB; MMIC amplifiers; PHEMT amplifiers; broadband amplifiers; driver amplifiers; high power amplifier; low power amplifier; medium power amplifier; mm-wave amplifiers; output power; Broadband amplifiers; Contracts; Costs; Driver circuits; Frequency; Gain; High power amplifiers; MMICs; Power amplifiers; Power generation;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave and Millimeter-Wave Monolithic Circuits Symposium, 1996. Digest of Papers., IEEE 1996

Conference_Location

San Francisco, CA, USA

Print_ISBN

0-7803-3360-8

Type

conf

DOI

10.1109/MCS.1996.506297

Filename

506297