Title :
Radiation hardness of a bonded silicon-vacuum-silicon field effect structure with 0.1 MGy capability
Author :
Harris, R. ; Ensell, G. ; Brunnschweiler, A.
Author_Institution :
Dept. of Electron. & Comput. Sci., Univ. of Southampton, Southampton, UK
Abstract :
An experimental field effect structure constructed without an insulating oxide layer is studied for use in high radiation total dose environments. Results are given for high frequency C-V curves carried out before and after a 50 KGy dose (5 Mrad [Si]) from a Co60 source.
Keywords :
field effect transistors; radiation hardening; bonded silicon vacuum silicon field effect structure; experimental field effect structure; high frequency curves; high radiation total dose environments; insulating oxide layer; radiation hardness; Bonding; Capacitors; Charge carrier processes; Circuits; Electron traps; Insulation; MOS devices; Radiation hardening; Silicon; Surface cleaning;
Conference_Titel :
Solid State Device Research Conference, 1993. ESSDERC '93. 23rd European
Conference_Location :
Grenoble
