Title :
Detailed Analysis of Buried Oxide Degradation Induced by Hot-Carrier Injection
Author :
Guichard, E. ; Cristoloveanu, S. ; Reimbold, G. ; Borel, G.
Author_Institution :
LETI, CEA-Technol. Av., Grenoble, France
Abstract :
The degradations of the SIMOX buried oxide after either front channel stress in p-MOSFETs or back channel stress in n-MOSFETs are analyzed as a function of drain bias and correlated. It is found that this damage may be alleviated and the device lifetime extended over 10 years by scaling the drain bias below 3V.
Keywords :
MOSFET; SIMOX; hot carriers; SIMOX buried oxide; back channel stress; buried oxide degradation; drain bias; front channel stress; hot-carrier injection; n-MOSFET; p-MOSFET; Aging; Degradation; Electron traps; Hot carrier injection; Hot carriers; MOSFET circuits; Stress; Temperature; Testing; Threshold voltage;
Conference_Titel :
Solid State Device Research Conference, 1993. ESSDERC '93. 23rd European
Conference_Location :
Grenoble
