Title :
Comparative study of hot-carrier degradation in p+ and n+ poly p-MOSFET´s of a 0.5 μm CMOS technology
Author :
Monsérié, C. ; Bellens, R. ; Groeseneken, G. ; Maes, H.E.
Author_Institution :
IMEC, Leuven, Belgium
Abstract :
In this paper, the degradation of p+ and n+ poly p-MOSFET devices of a 0.5 μm technology is studied in detail. The former devices exhibit intrinsically a better hot-carrier hardness. The difference in hot carrier behaviour between the p+ and n+ poly transistors is attributed mainly to the short channel effect. The p+ poly devices are therefore more suited for the realisation of deep submicron devices.
Keywords :
CMOS integrated circuits; MOSFET; hot carriers; CMOS technology; deep submicron device; hot-carrier degradation; hot-carrier hardness; n+ poly p-MOSFET; n+ poly transistor; p+ poly p-MOSFET; p+ poly transistor; short channel effect; size 0.5 mum; CMOS process; CMOS technology; Condition monitoring; Degradation; Hot carriers; Implants; Insulation; MOSFET circuits; Stress; Threshold voltage;
Conference_Titel :
Solid State Device Research Conference, 1993. ESSDERC '93. 23rd European
Conference_Location :
Grenoble
