• DocumentCode
    1916024
  • Title

    Comparative study of hot-carrier degradation in p+ and n+ poly p-MOSFET´s of a 0.5 μm CMOS technology

  • Author

    Monsérié, C. ; Bellens, R. ; Groeseneken, G. ; Maes, H.E.

  • Author_Institution
    IMEC, Leuven, Belgium
  • fYear
    1993
  • fDate
    13-16 Sept. 1993
  • Firstpage
    829
  • Lastpage
    832
  • Abstract
    In this paper, the degradation of p+ and n+ poly p-MOSFET devices of a 0.5 μm technology is studied in detail. The former devices exhibit intrinsically a better hot-carrier hardness. The difference in hot carrier behaviour between the p+ and n+ poly transistors is attributed mainly to the short channel effect. The p+ poly devices are therefore more suited for the realisation of deep submicron devices.
  • Keywords
    CMOS integrated circuits; MOSFET; hot carriers; CMOS technology; deep submicron device; hot-carrier degradation; hot-carrier hardness; n+ poly p-MOSFET; n+ poly transistor; p+ poly p-MOSFET; p+ poly transistor; short channel effect; size 0.5 mum; CMOS process; CMOS technology; Condition monitoring; Degradation; Hot carriers; Implants; Insulation; MOSFET circuits; Stress; Threshold voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid State Device Research Conference, 1993. ESSDERC '93. 23rd European
  • Conference_Location
    Grenoble
  • Print_ISBN
    2863321358
  • Type

    conf

  • Filename
    5435617
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1916024