On the use of IGBT-gated GTO-cascode switches in quasi-resonant converters

Author

Chan, T.K. ; Morcos, M.M.

Author_Institution

Dept. of Electr. & Comput. Eng., Kansas State Univ., Manhattan, KS, USA

fYear

1993

fDate

2-8 Oct 1993

Firstpage

1346

Abstract

The use of an insulated-gate bipolar transistor (IGBT) to improve the switching performance of a gate turn-off (GTO) thyristor in a cascode switch is documented. The IGBT-gated GTO-cascode switch features simple drive requirement, fast switching, robustness, and overcurrent protection. The cascode switch was applied in a quasi-resonant buck power converter and simulated on a computer using PSpice. The IGBT-gated GTO-cascode switch is suitable for high-power (1200 V, 140 A) and high-frequency operation up to 30 kHz. The turn-off time of the main switch, GTO, is reduced significantly due to the reverse current gain of unity in cascode configuration

Keywords

SPICE; circuit analysis computing; circuit resonance; digital simulation; insulated gate bipolar transistors; overcurrent protection; power convertors; power transistors; semiconductor switches; switching circuits; thyristor applications; 1200 V; 140 A; 30 kHz; GTO; IGBT-gated GTO-cascode switches; PSpice; digital simulation; overcurrent protection; quasi-resonant buck power converter; reverse current gain; robustness; switching performance; thyristor; turn-off time; Current supplies; Electric breakdown; Insulated gate bipolar transistors; MOSFET circuits; Power semiconductor switches; Robustness; Switching circuits; Switching converters; Thyristors; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Industry Applications Society Annual Meeting, 1993., Conference Record of the 1993 IEEE

Conference_Location

Toronto, Ont.

Print_ISBN

0-7803-1462-X

Type

conf

DOI

10.1109/IAS.1993.299128

Filename

299128