Title :
The optical properties of a modulation doped interdiffused quantum well
Author :
Lee, Alex S.W. ; Li, E. Herbert
Author_Institution :
Dept. of Electr. & Electron. Eng., Hong Kong Univ., Hong Kong
Abstract :
The linear and nonlinear (based on optical field intensity) intersubband electroabsorptions and the change in refractive index due to intersubband optical transitions in AlGaAs/GaAs diffused quantum wells are presented. The calculation of the electron energy levels and the envelope wave functions in a modulation doped interdiffused quantum wells with screening effects is considered. Effects of interdiffusion to the intersubband absorptions and refractive index changes in QWs with different well width, doping concentration, Al concentration ratio are discussed individually in detail with numerical results. The shift of the transition energies (mainly contributed by the lowest two subbands) will be a useful application in broadband and multicolour photodetectors
Keywords :
III-V semiconductors; aluminium compounds; chemical interdiffusion; electroabsorption; gallium arsenide; interface states; nonlinear optics; refractive index; semiconductor quantum wells; wave functions; Al concentration ratio; AlGaAs-GaAs; AlGaAs/GaAs diffused quantum wells; broadband photodetectors; doping concentration; electron energy levels; envelope wave functions; interdiffusion; intersubband absorption; intersubband optical transitions; linear intersubband electroabsorption; modulation doped interdiffused quantum well; modulation doped interdiffused quantum wells; multicolour photodetectors; nonlinear intersubband electroabsorption; optical properties; refractive index; screening effects; subbands; well width; Electron optics; Energy states; Epitaxial layers; Gallium arsenide; Nonlinear optics; Optical modulation; Optical refraction; Optical variables control; Refractive index; Wave functions;
Conference_Titel :
Electron Devices Meeting, 1999. Proceedings. 1999 IEEE Hong Kong
Conference_Location :
Shatin
Print_ISBN :
0-7803-5648-9
DOI :
10.1109/HKEDM.1999.836396