Photoconductive detection of millimetre waves using proton bombarded GaAs

Author

Wong, C.S. ; Dai, J.M. ; Tsang, H.K.

Author_Institution

Dept. of Electron. Eng., Chinese Univ. of Hong Kong, Shatin, Hong Kong

fYear

1999

fDate

1999

Firstpage

14

Lastpage

17

Abstract

We show that ion-damaged GaAs may be used to detect millimetre electromagnetic waves in photoconductive sampling gates. The semi-insulating GaAs material which was implanted with a dose of 10¹⁴ cm^-2 protons at an energy of 200 keV gave a signal to noise improvement of about 11.4 dB when compared with as-grown semi-insulating GaAs. The improvement is in spite of reduced carrier mobility in the ion-implanted material and is due to the shorter carrier lifetime and formation of Ohmic contacts with the ion-damaged semi-insulating GaAs

Keywords

III-V semiconductors; carrier lifetime; carrier mobility; gallium arsenide; millimetre wave detectors; photodetectors; proton effects; 200 keV; GaAs; carrier lifetime; carrier mobility; ion-damage; millimetre wave detection; ohmic contacts; photoconductive sampling gates; proton bombarded GaAs; semi-insulating GaAs; signal to noise ratio; Detectors; Dipole antennas; Electrodes; Electromagnetic scattering; Gallium arsenide; Inorganic materials; Laser excitation; Photoconductivity; Protons; Resonance;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 1999. Proceedings. 1999 IEEE Hong Kong

Conference_Location

Shatin

Print_ISBN

0-7803-5648-9

Type

conf

DOI

10.1109/HKEDM.1999.836397

Filename

836397