First demonstration of nanosecond photon timing in the near-infrared with InGaAs/InP detectors

Author

Samori, C. ; Lacaita, A. ; Francese, P.A. ; Cova, S. ; Webb, P.

Author_Institution

Dipt. di Elettron. e Inf., Politec. di Milano, Milan, Italy

fYear

1993

fDate

13-16 Sept. 1993

Firstpage

851

Lastpage

854

Abstract

We show that SAGM InGaAs/InP Avalanche Photodiodes, cooled at 200K, detect the arrival time of single photons with nanosecond resolution. Hole trapping at the heterointerface impairs the performance of presently available devices. However, a proper design of the structure for low temperature operation is expected to improve their timing performance well below the nanosecond limit.

Keywords

III-V semiconductors; avalanche photodiodes; gallium arsenide; hole traps; indium compounds; infrared detectors; photodetectors; semiconductor counters; InGaAs-InP; SAGM avalanche photodiode; hole trapping; nanosecond photon timing; nanosecond resolution; near-infrared detector; single photon; temperature 200 K; Avalanche photodiodes; Detectors; Indium gallium arsenide; Indium phosphide; Optical devices; Silicon; Spatial resolution; Temperature; Testing; Timing;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid State Device Research Conference, 1993. ESSDERC '93. 23rd European

Conference_Location

Grenoble

Print_ISBN

2863321358

Type

conf

Filename

5435621

Link To Document

https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1916111