Title :
First demonstration of nanosecond photon timing in the near-infrared with InGaAs/InP detectors
Author :
Samori, C. ; Lacaita, A. ; Francese, P.A. ; Cova, S. ; Webb, P.
Author_Institution :
Dipt. di Elettron. e Inf., Politec. di Milano, Milan, Italy
Abstract :
We show that SAGM InGaAs/InP Avalanche Photodiodes, cooled at 200K, detect the arrival time of single photons with nanosecond resolution. Hole trapping at the heterointerface impairs the performance of presently available devices. However, a proper design of the structure for low temperature operation is expected to improve their timing performance well below the nanosecond limit.
Keywords :
III-V semiconductors; avalanche photodiodes; gallium arsenide; hole traps; indium compounds; infrared detectors; photodetectors; semiconductor counters; InGaAs-InP; SAGM avalanche photodiode; hole trapping; nanosecond photon timing; nanosecond resolution; near-infrared detector; single photon; temperature 200 K; Avalanche photodiodes; Detectors; Indium gallium arsenide; Indium phosphide; Optical devices; Silicon; Spatial resolution; Temperature; Testing; Timing;
Conference_Titel :
Solid State Device Research Conference, 1993. ESSDERC '93. 23rd European
Conference_Location :
Grenoble
