Advances in GaAs HBT power amplifiers for cellular phones and military applications

Author

Ali, F. ; Gupta, A. ; Higgins, A.

Author_Institution

Adv. Technol. Center, Westinghouse Electr. Corp., Baltimore, MD, USA

fYear

1996

fDate

17-19 June 1996

Firstpage

61

Lastpage

66

Abstract

This paper provides a synopsis of the research and development efforts in the USA in power amplifiers designed with GaAs Heterojunction Bipolar Transistor (HBT) technology. Design issues, performance and reliability of power amplifiers using AlGaAs/GaAs HBTs for RF, microwave and millimeter-wave applications are discussed. Key device parameters influencing different frequency applications are highlighted.

Keywords

III-V semiconductors; MMIC power amplifiers; UHF power amplifiers; bipolar MMIC; cellular radio; gallium arsenide; integrated circuit design; integrated circuit reliability; integrated circuit technology; microwave power amplifiers; military equipment; millimetre wave power amplifiers; AlGaAs-GaAs; AlGaAs/GaAs HBTs; GaAs HBT power amplifiers; GaAs heterojunction bipolar transistor technology; UHF applications; cellular phones; design issues; microwave applications; military applications; millimeter-wave applications; performance; reliability; Cellular phones; Gallium arsenide; Heterojunction bipolar transistors; Microwave amplifiers; Microwave devices; Millimeter wave technology; Power amplifiers; Radio frequency; Radiofrequency amplifiers; Research and development;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave and Millimeter-Wave Monolithic Circuits Symposium, 1996. Digest of Papers., IEEE 1996

Conference_Location

San Francisco, CA, USA

Print_ISBN

0-7803-3360-8

Type

conf

DOI

10.1109/MCS.1996.506304

Filename

506304