Title :
Advances in GaAs HBT power amplifiers for cellular phones and military applications
Author :
Ali, F. ; Gupta, A. ; Higgins, A.
Author_Institution :
Adv. Technol. Center, Westinghouse Electr. Corp., Baltimore, MD, USA
Abstract :
This paper provides a synopsis of the research and development efforts in the USA in power amplifiers designed with GaAs Heterojunction Bipolar Transistor (HBT) technology. Design issues, performance and reliability of power amplifiers using AlGaAs/GaAs HBTs for RF, microwave and millimeter-wave applications are discussed. Key device parameters influencing different frequency applications are highlighted.
Keywords :
III-V semiconductors; MMIC power amplifiers; UHF power amplifiers; bipolar MMIC; cellular radio; gallium arsenide; integrated circuit design; integrated circuit reliability; integrated circuit technology; microwave power amplifiers; military equipment; millimetre wave power amplifiers; AlGaAs-GaAs; AlGaAs/GaAs HBTs; GaAs HBT power amplifiers; GaAs heterojunction bipolar transistor technology; UHF applications; cellular phones; design issues; microwave applications; military applications; millimeter-wave applications; performance; reliability; Cellular phones; Gallium arsenide; Heterojunction bipolar transistors; Microwave amplifiers; Microwave devices; Millimeter wave technology; Power amplifiers; Radio frequency; Radiofrequency amplifiers; Research and development;
Conference_Titel :
Microwave and Millimeter-Wave Monolithic Circuits Symposium, 1996. Digest of Papers., IEEE 1996
Conference_Location :
San Francisco, CA, USA
Print_ISBN :
0-7803-3360-8
DOI :
10.1109/MCS.1996.506304
