Title :
Relation between reliability and yield of ICs based on discrete defect distribution model
Author :
Zhao, Tianxu ; Hao, Yue ; MA, Peijun ; Chen, Taifeng
Author_Institution :
Microelectron. Inst., Xidian Univ., Xi´´an, China
Abstract :
Yield and reliability are two important factors affecting the development of semiconductor manufacturing. It is an important problem, how to express the relation between yield and reliability. In this paper, a model of the relation is given between yield and reliability based on a discrete yield model, many factors are considered in this model, such as the line width, the spacing between the lines as well as the distribution of the defect size and so on. Finally, the validity of this model is shown by simulation
Keywords :
circuit simulation; integrated circuit modelling; integrated circuit reliability; integrated circuit yield; IC reliability; IC yield; defect size; discrete defect distribution model; line width; model validity; semiconductor manufacturing; Fault tolerant systems; Integrated circuit modeling; Very large scale integration;
Conference_Titel :
Defect and Fault Tolerance in VLSI Systems, 2001. Proceedings. 2001 IEEE International Symposium on
Conference_Location :
San Francisco, CA
Print_ISBN :
0-7695-1203-8
DOI :
10.1109/DFTVS.2001.966751
