DocumentCode
1916166
Title
A silicon BiCMOS transceiver front-end MMIC covering 900 and 1900 MHz applications
Author
Titus, W. ; Shifrin, M. ; Asparin, V. ; Bedard, B.
Author_Institution
Hittite Microwave Corp., Woburn, MA, USA
fYear
1996
fDate
17-19 June 1996
Firstpage
73
Lastpage
76
Abstract
A silicon BiCMOS transceiver front-end consisting of a low noise amplifier, power amplifier, and SPDT switch is described. The chip runs off a 5 V supply and requires a single CMOS/TTL control line for switch control. The LNA path has a 22 dB gain and 4 dB noise figure at 900 MHz. The PA has a gain of 22 dB and an output power of 15 dBm. The SPDT switch has an insertion loss of 1.3 dB, and an isolation of 22 dB at 900 MHz.
Keywords
BiCMOS analogue integrated circuits; MMIC; UHF integrated circuits; silicon; transceivers; 1.3 dB; 1900 MHz; 22 dB; 4 dB; 5 V; 900 MHz; CMOS/TTL control line; SPDT switch; Si; low noise amplifier; power amplifier; silicon BiCMOS transceiver front-end MMIC; BiCMOS integrated circuits; Gain; Insertion loss; Low-noise amplifiers; MMICs; Noise figure; Power generation; Silicon; Switches; Transceivers;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave and Millimeter-Wave Monolithic Circuits Symposium, 1996. Digest of Papers., IEEE 1996
Conference_Location
San Francisco, CA, USA
Print_ISBN
0-7803-3360-8
Type
conf
DOI
10.1109/MCS.1996.506306
Filename
506306
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