Title :
High Power Vertical Cavity Laser Diodes
Author :
Zeeb, E. ; Hackbarth, T. ; Ebeling, K.J.
Author_Institution :
Abt. Optoelektron., Univ. Ulm, Ulm, Germany
Abstract :
We have fabricated proton-implanted InGaAs/GaAs quantum well vertical cavity surface emitting laser diodes with active diameters between 10 and 95 μm. Minimum threshold currents of 1.4 mA for 10 μm devices and 20 mW cw output power for 95 μm devices solder bonded on laser submounts are measured.
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; optical fabrication; quantum well lasers; surface emitting lasers; InGaAs-GaAs; high power vertical cavity laser diodes; laser submounts; proton-implanted quantum well; quantum well laser; size 10 mum; size 95 mum; solder bonded; vertical cavity surface emitting laser diodes; Bonding; Diode lasers; Gallium arsenide; Indium gallium arsenide; Power generation; Power lasers; Quantum well lasers; Surface emitting lasers; Threshold current; Vertical cavity surface emitting lasers;
Conference_Titel :
Solid State Device Research Conference, 1993. ESSDERC '93. 23rd European
Conference_Location :
Grenoble
