Title :
An Intelligent 600 V Vertical IGBT on SIMOX Substrate
Author :
Mütterlein, B. ; Vogt, F. ; Weyers, J. ; Vogt, H.
Author_Institution :
Fraunhofer-Inst. of Microelectron. Circuits & Syst., Duisburg, Germany
Abstract :
This paper describes a smart power device which uses a vertical 600 V, 10 A IGBT as a power switch and a signal and control circuit fabricated with a 2μm SOI-CMOS technology. The dielectric isolation between the IGBT and the control circuit is formed by SIMOX (separation by implanted oxygen) and LOCOS technology. A self protection is achieved by measuring load current and device temperature. The protection is provided by analog and digital CMOS circuits with a supply voltage of 10 V. This device is used as an intelligent switch in a full bridge circuit for motor control.
Keywords :
CMOS integrated circuits; SIMOX; insulated gate bipolar transistors; oxidation; power integrated circuits; LOCOS technology; SIMOX substrate; SOI-CMOS technology; control circuit; full bridge circuit; power switch; separation by implanted oxygen; smart power device; vertical IGBT; voltage 10 V; voltage 600 V; CMOS technology; Circuits; Current measurement; Dielectric measurements; Dielectric substrates; Insulated gate bipolar transistors; Isolation technology; Protection; Switches; Temperature;
Conference_Titel :
Solid State Device Research Conference, 1993. ESSDERC '93. 23rd European
Conference_Location :
Grenoble
