• DocumentCode
    1916254
  • Title

    Interface properties of N2O-annealed NH3-treated 6H-SiC MOS capacitor

  • Author

    Lai, P.T. ; Xu, P. ; Chan, C.L. ; Cheng, Y.C.

  • Author_Institution
    Dept. of Electr. & Electron. Eng., Hong Kong Univ., Hong Kong
  • fYear
    1999
  • fDate
    1999
  • Firstpage
    46
  • Lastpage
    49
  • Abstract
    Effects of pre-oxidation NH3 treatment and post-oxidation N2O annealing on n-SiC/SiO2 interface properties were investigated as compared to conventional thermally-oxidized devices. It was found that NH3 treatment before oxidation is beneficial for the interface-quality improvement. Moreover, the combination of NH3 treatment with N2O annealing can further harden the SiC/SiO2 interface, enhancing its resistance against high-field and high-temperature stressings
  • Keywords
    MOS capacitors; annealing; interface states; silicon compounds; surface treatment; wide band gap semiconductors; 6H-SiC MOS capacitor; N2O; NH3; SiC-SiO2; high-field stressing; high-temperature stressing; interface properties; interface-quality; post-oxidation N2O annealing; pre-oxidation NH3 treatment; Annealing; Capacitance-voltage characteristics; Hafnium; Interface states; MOS capacitors; Oxidation; Silicon carbide; Surface cleaning; Surface treatment; Thermal conductivity;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electron Devices Meeting, 1999. Proceedings. 1999 IEEE Hong Kong
  • Conference_Location
    Shatin
  • Print_ISBN
    0-7803-5648-9
  • Type

    conf

  • DOI
    10.1109/HKEDM.1999.836405
  • Filename
    836405
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1916254