A Novel MCT Structure For Power Integrated Cirluits

A novel MOS Controlled Thyristor(MCT) structure suitable for Power Integrated Circuits is proposed and predicted performance from simulation are reported. The novel MCT structure has the features of: 1) an LIGBT cell structure to control the turn ´on´ of the MCT cells; 2) many MCT cells which are paralleled in a fashion similar to the conventional MCT structure; 3) the turn off using a second turn off gate which shorts the anode of the main thyristor. The advantage of the novel structure(termed the LIGBT-MCT) includes compatibility for lateral power integration, vertical current flow to realise high current density power integration and breakdown voltage controlled by the RESURF principle. The maximum controllable current of the LIGBT-MCT is similar to that of state-of-art discrete MCTs.