• DocumentCode
    1916340
  • Title

    Charge transport and nature of traps in implanted silicon nitride

  • Author

    Gritsenko, V.A. ; Morokov, Yu.N. ; Xu, B. ; Pridachin, N.B. ; Kalinin, V.V. ; Ng, A.C. ; Lau, L.W.M. ; Kwok, R.W.M.

  • Author_Institution
    Inst. of Semicond. Phys., Novosibirsk, Russia
  • fYear
    1999
  • fDate
    1999
  • Firstpage
    62
  • Lastpage
    65
  • Abstract
    The authors study the charge transport in ion implanted Si3 N4 and aim to understand the charge transport mechanism and the nature of defects responsible for the charge transport. They find that the charge transport is described by thermally assisted tunneling with trap energy in the range of 2.2 eV
  • Keywords
    dielectric thin films; electrical conductivity; electron traps; hole traps; ion implantation; silicon compounds; tunnelling; Si3N4; electron traps; hole traps; implanted silicon nitride; thermally assisted tunneling; trap energy; Charge carrier processes; Chemical technology; Chemistry; Dielectric devices; Electron traps; Physics; Radiative recombination; Silicon; Spontaneous emission; Tunneling;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electron Devices Meeting, 1999. Proceedings. 1999 IEEE Hong Kong
  • Conference_Location
    Shatin
  • Print_ISBN
    0-7803-5648-9
  • Type

    conf

  • DOI
    10.1109/HKEDM.1999.836409
  • Filename
    836409
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1916340