Title :
On P-I-N Diode Parameters and Static Properties at Elevated Temperatures and High Current Densities-Experiment vs. Simulation
Author :
Bleichner, H. ; Rosling, M. ; Jonsson, P. ; Masszi, F. ; Vojdani, F. ; Isberg, M. ; Nordlander, E.
Author_Institution :
Dept. of Technol., Uppsala Univ., Uppsala, Sweden
Abstract :
A well calibrated free-carrier absorption (FCA) technique was used to characterize the physical properties of P-I-N diode samples at different temperatures and injection levels. The measurements were compared with simulations in order to check the validity of some models and parameters which commonly appear in the simulation programs. The samples, as well as measurement temperatures (30-150°C) and injection levels (1015-1017cm-3), are typical for the driving conditions of power devices.
Keywords :
current density; p-i-n diodes; FCA technique; P-I-N diode parameters; elevated temperatures; free-carrier absorption; high current densities; static properties; temperature 30 degC to 150 degC; Absorption; Density measurement; Educational institutions; Optical scattering; P-i-n diodes; Power measurement; Probes; Silicon; Temperature measurement; Wavelength measurement;
Conference_Titel :
Solid State Device Research Conference, 1993. ESSDERC '93. 23rd European
Conference_Location :
Grenoble
